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  BUT90 high power npn silicon transistor n npn transistor n high current capability n fast switching speed n high ruggedness n low collector emitter saturation applications n uninterruptable power supply n motor control n linear and switching industrial equipment description the BUT90 is a multiepitaxial planar npn transistor in to-3 package. it is intended for use in high frequency and efficency converters, switching regulators and motor control. ? internal schematic diagram february 2003 1 2 to-3 (version "s") absolute maximum ratings symbol parameter value unit v cev collector-emitter voltage (v be = -1.5 v) 200 v v ceo collector-emitter voltage (i b = 0) 125 v v ebo emitter-base voltage (i c = 0) 10 v i c collector current 50 a i cm collector peak current (t p = 10 ms) 120 a i b base current 12 a i bm base peak current (t p = 10 ms) 32 a p tot total power dissipation at t case 25 o c 250 w t stg storage temperature -65 to 200 o c t j max operating junction temperature 200 o c 1/4
thermal data r thj-case thermal resistance junction-case max 0.7 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cer collector cut-off current (r be = 10 w ) v ce = v cev v ce = v cev t c = 100 o c 0.4 4 ma ma i cev collector cut-off current (v be = -1.5v) v ce = v cev v ce = v cev t c = 100 o c 0.2 2 ma ma i ebo emitter cut-off current (i c = 0) v eb = 7 v 1 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 0.2 a l = 25 mh 125 v v ebo emitter-base voltage (i c = 0) i e = 50 ma 10 v v ce(sat) * collector-emitter saturation voltage i c = 35 a i b = 1.75 a i c = 70 a i b = 7 a i c = 35 a i b = 1.75 a t c = 100 o c i c = 70 a i b = 7 a t c = 100 o c 0.55 0.8 0.75 1.2 0.9 0.9 1.2 1.5 v v v v v be(sat) * base-emitter saturation voltage i c = 35 a i b = 1.75 a i c = 70 a i b = 7 a i c = 35 a i b = 1.75 a t c = 100 o c i c = 70 a i b = 7 a t c = 100 o c 1 1.45 1 1.65 1.3 1.8 1.4 2 v v v v resistive load symbol parameter test conditions min. typ. max. unit t r t s t f rise time storage time fall time v cc = 100 v i c = 70 a i b1 = - i b2 = 7 a t p = 30 m s 0.8 0.9 0.2 1.2 1.5 0.4 m s m s m s t r t s t f rise time storage time fall time v cc = 100 v i c = 70 a i b1 = - i b2 = 7 a t p = 30 m s t j = 100 o c 1.1 1.2 0.3 1.6 2 0.6 m s m s m s inductive load symbol parameter test conditions min. typ. max. unit t s t f storage time fall time v cc = 100 v v clamp = 125 v i c = 70 a i b1 = - i b2 = 7 a l c = 70 m h 1.25 0.16 2 0.3 ms m s t s t f storage time fall time v cc = 100 v v clamp = 125 v i c = 70 a i b1 = - i b2 = 7 a l c = 70 m h t j = 100 o c 1.5 0.25 2.3 0.5 m s m s * pulsed : pulse duration = 300 m s, duty cycle = 2% BUT90 2/4
dim. mm inch min. typ. max. min. typ. max. a 11.00 13.10 0.433 0.516 b 1.47 1.60 0.058 0.063 c 1.50 1.65 0.059 0.065 d 8.32 8.92 0.327 0.351 e 19.00 20.00 0.748 0.787 g 10.70 11.10 0.421 0.437 n 16.50 17.20 0.649 0.677 p 25.00 26.00 0.984 1.023 r 4.00 4.09 0.157 0.161 u 38.50 39.30 1.515 1.547 v 30.00 30.30 1.187 1.193 e b r c d a p g n v u o p003o to-3 (version s) mechanical data BUT90 3/4
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2003 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com BUT90 4/4


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